PXAE183708NB-V1-R2 datasheet(1/9 Pages) WOLFSPEED

部件名	PXAE183708NB-V1-R2

功能描述	Thermally-Enhanced High Power RF LDMOS FET 320 W, 48 V, 1805 – 1880 MHz

PDF	9 Pages

Scroll/Zoom	100%

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

1 / 9 page

Rev. 04, 2022-12-20

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

PXAE183708NB

Package Type: PG-HB2SOF-8-1

Features

• Broadband internal input and output matching

• Asymmetrical Doherty design

- Main: P3dB = 160 W Typ

- Peak: P3dB = 315 W Typ

• Typical Pulsed CW performance, 1880 MHz, 28 V,

Doherty configuration, 10 µs pulse width, 10%

duty cycle, Class AB (main), Class C (peak)

- Output power at P1dB = 320 W

- Output power at P3dB = 430 W

- Drain efficiency = 60%

- Gain = 13.5 dB

• Capable of handling 10:1 VSWR @ 28 V, 54 W (1C

WCDMA) output power

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Integrated ESD protection

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF LDMOS FET

320 W, 48 V, 1805 – 1880 MHz

Description

The PXAE183708NB is a 320-watt LDMOS FET intended for use in

multi-standard cellular power amplifier applications in the 1805 to

1880 MHz frequency band. Features include input and output match-

ing, high gain and thermally-enhanced package with earless flange.

Manufactured with Wolfspeed’s advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ= 800 mA, ƒ = 1880 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

pxae183708nb_g1

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test circuit)

VDD = 28 V, IDQ = 800 mA, POUT = 54 W avg, VGS(PEAK) = 1.5 V, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10

dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

Gps

15.3

16

—

dB

Drain Efficiency

hD

48

50.5

—

%

Adjacent Channel Power Ratio

ACPR

—

–29.5

–25

dBc

Output PAR @ 0.01% CCDF

OPAR

6.8

7.7

—

dB

类似零件编号 - PXAE183708NB-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	PXAE183708NB	486Kb / 6P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 1805 ??1880 MHz

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