4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 0

7, 2023-06-28

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Thermally-Enhanced High Power RF LDMOS FET

220 W, 28 V, 1805 – 1990 MHz

Description

The PXFC192207FH is a 220-watt LDMOS FET intended for

use in multi-standard cellular power amplifier applications in the

1805 to 1990 MHz frequency band. Features include input and

output matching, high gain and thermally-enhanced package with

earless flanges. Manufactured with Wolfspeed's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

PXFC192207FH

Package H-37288G-4/2

Features

• Broadband input and output matching

• Typical Pulsed CW performance, 1990 MHz, 28 V,

16 µs pulse width, 10 % duty cycle, class AB

- Output power at P1dB = 220 W

- Efficiency = 55%

- Gain = 20 dB

• Typical single-carrier WCDMA performance, 1990

MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR

- Output power = 50 W

- Efficiency = 29%

- Gain = 20 dB

- ACPR = –34 dBc @ 5 MHz

• Capable of handling 10:1 VSWR @28 V, 220 W

(CW) output power

• Integrated ESD protection : Human Body Model,

Class 1C (per JESD22-A114)

• Low thermal resistance

• Pb-free and RoHS compliant

RF Characteristics

Two-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)

VDD = 28 V, IDQ = 1600 mA, POUT = 50 W avg, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 8 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Linear Gain

Gps

19

20.5

—

dB

Drain Efficiency

hD

29

32

—

%

Intermodulation Distortion

IMD

—

–32.5

–29

dBc

0

10

20

30

40

50

60

0

5

10

15

20

25

30

30

35

40

45

50

55

Output Power (dBm)

Two-carrier WCDMA Drive-up

VDD = 28 V,IDQ = 1600 mA,

3GPP WCDMA signal, PAR = 8 dB,

10 MHz carrier spacing, BW 3.84 MHz

1930 MHz

1960 MHz

1990 MHz

c192207fh_g1

Gain

Efficiency

PXFC192207FH