All published data at TCASE = 25°C unless otherwise indicated

Rev. 03, 2023-02-04

© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc.

The information in this document is subject to change without notice.

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WS1A2639

Package PG-LGA-6x6-3-1

GaN on SiC Power Amplifier Module for 5G

Features

• GaN on SiC technology

• Frequency: 2496-2690 MHz

• Average Output Power : 6 to 8 W maximum

• PSAT = 48 dBm

• RF inputs matched to 50 Ω and DC matched

• Gate bias supply for main and peak sides available from either side

of device

• Integrated harmonic terminations

• Pb-free and RoHS compliant

WS1A2639

Description

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with RF matching

and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A2639 has been designed to

operate from 2496 MHz to 2690 MHz supply voltages of up to 50 V at average output power levels of 6 to 8 W with crest-factor reduced

and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6

mm land grid array (LGA) package.

Typical Broadband Performance

Single-carrier LTE Performance (tested in Wolfspeed applications circuit for 2500 – 2700 MHz)

VDD = 48 V, IDQ(main) = 25 mA, VGS(peak) = –5 V, channel bandwidth = 5 MHz, input PAR = 10 dB @ 0.01% CCDF

POUT

(dBM)

Gain

(dB)

Efficiency

(%)

ACPR –

(dBc)

ACPR +

(dBc)

PAR

(dB)

2500 MHz

38.5

17.8

53.5

–26.5

–26.2

8.05

2600 MHz

38.5

17.8

54.3

–26

–25.7

7.95

2700 MHz

38.5

16.9

53.2

–28

–28.5

8.2