WS1A3640

4

Rev. 03, 2023-02-04

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The information in this document is subject to change without notice.

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Bias Sequencing

Bias ON

1.

Ensure RF is turned off

2.

Apply pinch-off voltage of –5 V to the gate

3.

Apply nominal drain voltage

4.

Bias gate to desired quiescent drain current

5.

Apply RF

Bias OFF

1.

Turn RF off

2.

Apply pinch-off voltage to the gate

3.

Turn-off drain voltage

4.

Turn-off gate voltage

Evaluation Boards - Typical RF Performance

Part Number

Frequency

POUT

(dBm)

Eff

(%)

Gain

(dB)

PAR

(dB)

ACPR+

(dBc)

ACPR–

(dBc)

Output Stage : WS1A3640

Single-carrier LTE Performance, VDD = 48 V, IDQ(main) = 70 mA, channel bandwidth = 18.015 MHz, input PAR = 10 dB @ 0.01% CCDF

FXA/WS1A3640P1.2.4-08

3.3-3.6 GHz

39.5

53

13.5

8.2

–28

–28

WSGPA01 Driver

Single-carrier WCDMA Performance, VDD = 48 V, IDQ = 25 mA, channel bandwidth = 3.84 MHz, input PAR = 10 dB @ 0.01% CCDF

FXA/WSGPA01V1-14

3.3-3.6 GHz

26.5

18

16

8.9

–45.1

–45.8

Board with Integrated WSGPA01 Driver and WS1A3640 Output Stage

Single-carrier WCDMA Performance, VDD = 48 V, IDQ = 70 mA, IDQ(driver) = 25 mA, channel bandwidth = 3.84 MHz, input PAR = 10 dB @ 0.01% CCDF

FXL/WS1A3640V2-01

3.4-3.6 GHz

39.5

48

29

8.0

-28

-28

FXL/WS1A3640V2-03

3.6-3.8 GHz

39.5

46

29

8.0

-31

-31

FXL/WS1A3640V2-02

3.4-3.8 GHz

39.5

45

29

8.0

-31

-31

Pinout Diagram (top view)

Source

(metalized

backside)

Index

marking

Peak

Main

16

17

18

19

20

15

14

13

12

11

10

9

8

7

6

1

2

3

4

5

Source

(metalized

backside)

Index

marking

Peak

Main

16

17

18

19

20

15

14

13

12

11

10

9

8

7

6

1

2

3

4

5

RFIN(PEAK)

RFIN(PEAK)

GND

RFIN(MAIN)

RFOUT(MAIN) + VDS(MAIN)

RFOUT(MAIN) + VDS(MAIN)

RFIN(MAIN)

GND

RFOUT(PEAK) + VDS(PEAK)

RFOUT(PEAK) + VDS(PEAK)