All published data at TCASE = 25°C unless otherwise indicated

Rev. 03, 2023-02-04

© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc.

The information in this document is subject to change without notice.

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WS1A3940

Package PG-LGA-6x6-3-1

GaN on SiC Power Amplifier Module for 5G

Features

• GaN on SiC technology

• Frequency: 3700-3980 MHz

• Average Output Power: 39.5 dBm

• PSAT = 48 dBm

• RF inputs matched to 50 Ω and DC matched

• Gate bias supply for main and peak sides available from either side

of device

• Integrated harmonic terminations

• Pb-free and RoHS compliant

WS1A3940

Description

The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with RF

matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3940 has been

designed to operate from 3700 MHz to 3980 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crest-

factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed

in a 6 mm X 6 mm land grid array (LGA) package.

Typical Broadband Performance

Single-carrier LTE Performance (tested in Wolfspeed applications circuit for 3700 – 4100 MHz)

VDD = 48 V, IDQ(main) = 45 mA, VGS(peak) = –5.1 V, channel bandwidth = 20 MHz, input PAR = 10 dB @ 0.01% CCDF

POUT

(dBM)

Gain

(dB)

Efficiency

(%)

ACPR –

(dBc)

ACPR +

(dBc)

PAR

(dB)

3700 MHz

39.5

14.5

53.0

–26

–26

8.3

3850 MHz

39.5

13.7

52.0

–30

–30

8.5

3980 MHz

39.5

12.9

51.0

–32

–32

8.5

4100 MHz

39.5

11.7

48.5

–29

–29

8.0