PEMH9_PIMH9_PUMH9

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Product data sheet

Rev. 5 — 12 November 2013

3 of 17

NXP Semiconductors

PEMH9; PIMH9; PUMH9

NPN/NPN resistor-equipped transistors; R1 = 10 k

, R2 = 47 k

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

6

V

VI

input voltage

positive

-

+40

V

negative

-

6V

IO

output current

-

100

mA

ICM

peak collector current

single pulse;

tp  1ms

-100

mA

Ptot

total power dissipation

Tamb  25 C

PEMH9 (SOT666)

[1] -200

mW

PIMH9 (SOT457)

[1]

250

mW

PUMH9 (SOT363)

[1] -200

mW

Per device

Ptot

total power dissipation

Tamb  25 C

PEMH9 (SOT666)

[1] -300

mW

PIMH9 (SOT457)

[1]

400

mW

PUMH9 (SOT363)

[1] -300

mW

Tj

junction temperature

-

150

C

Tamb

ambient temperature

55

+150

C

Tstg

storage temperature

65

+150

C