IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

20

30

S

C

iss

8200

pF

C

oss

V

GS

= 0 V, V

760

pF

C

rss

140

pF

t

d(on)

22

ns

t

r

V

GS

= 10 V, V

14

ns

t

d(off)

R

60

ns

t

f

10

ns

Q

g(on)

186

nC

Q

gs

V

GS

= 10 V, V

46

nC

Q

gd

82

nC

R

thJC

0.17

K/W

R

thCK

TO-264

0.15

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

30

A

I

SM

Repetitive; pulse width limited by T

JM

120

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

250

ns

Q

RM

1

µC

I

RM

10

A

I

TO-264 AA Outline

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.82

5.13

.190

.202

A1

2.54

2.89

.100

.114

A2

2.00

2.10

.079

.083

b

1.12

1.42

.044

.056

b1

2.39

2.69

.094

.106

b2

2.90

3.09

.114

.122

c

0.53

0.83

.021

.033

D

25.91

26.16

1.020

1.030

E

19.81

19.96

.780

.786

e

5.46BSC

.215BSC

J

0.00

0.25

.000

.010

K

0.00

0.25

.000

.010

L

20.32

20.83

.800

.820

L1

2.29

2.59

.090

.102

P

3.17

3.66

.125

.144

Q

6.07

6.27

.239

.247

Q1

8.38

8.69

.330

.342

R

3.81

4.32

.150

.170

R1

1.78

2.29

.070

.090

S

6.04

6.30

.238

.248

T

1.57

1.83

.062

.072

Dim.

IXFK 30N100Q2

IXFX 30N100Q2

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.83

5.21

.190

.205

A

1

2.29

2.54

.090

.100

A

2

1.91

2.16

.075

.085

b

1.14

1.40

.045

.055

b

1

1.91

2.13

.075

.084

b

2

2.92

3.12

.115

.123

C

0.61

0.80

.024

.031

D

20.80

21.34

.819

.840

E

15.75

16.13

.620

.635

e

5.45 BSC

.215 BSC

L

19.81

20.32

.780

.800

L1

3.81

4.32

.150

.170

Q

5.59

6.20

.220 0.244

R

4.32

4.83

.170

.190

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)