MA2910
11
DC CHARACTERISTICS AND RATINGS
Parameter
Min
Max
Units
Supply Voltage
-0.5
7
V
Input Voltage
-0.3
VDD+0.3
V
Current Through Any Pin
-20
+20
mA
Operating Temperature
-55
125
°C
Storage Temperature
-65
150
°C
Note: Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the operations
section of this specification, is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
Figure 24: Absolute Maximum Ratings
Subgroup
Definition
1
Static characteristics specified in Figure 26 at +25°C
2
Static characteristics specified in Figure 26 at +125°C
3
Static characteristics specified in Figure 26 at -55°C
9
Switching characteristics specified in Figures 27 to 29 at +25°C
10
Switching characteristics specified in Figures 27 to 29 at +125°C
11
Switching characteristics specified in Figures 27 to 29 at -55°C
Figure 25: Definition of Subgroups
Total dose radiation not exceeding
3x105 Rad (Si)
Symbol Parameter
Conditions
Units
Min.
Typ.
Max .
VDD
Supply voltage
-
4 5
5.0
5 5
V
VIH
Input high voltage
-
2.0
-
-
V
VIL
Input low voltage
-
-
-
0 8
V
VOH
Output high voltage
IOH = -2mA
2.4
-
-
V
VOL
Output low voltage
IOL = 5mA
-
-
0.4
V
IIN
Input leakage current (Note 1)
VDD = 5.5V,
-
-
±10
µA
VIN = VSS or VDD
IOZ
Tristate leakage current (Note 1)
VDD = 5.5V,
-
-
±50
µA
VIN = VSS Or VDD
IDD
Power supply current
Static, VDD = 5.5V
-
0.1
10
mA
Mil-Std-883, method 5005, subgroups 1, 2, 3
VDD = 5V ±10%, over full operating temperature range.
Note 1: Worst case at TA = +125°C, guaranteed at TA = -55°C. 300K Rad(Si) values at higher radiation levels are available on
request.
Figure 26: Operating Electrical Characteristics
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
