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IDT7134LA55JB 数据表(PDF) 7 Page - Integrated Device Technology |
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IDT7134LA55JB 数据表(HTML) 7 Page - Integrated Device Technology |
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7 / 11 page  7 IDT7134SA/LA High-Speed 4K x 8 Dual-Port Static SRAM Military, Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle No. 1, Either Side(1,2,4) Timing Waveform of Read Cycle No. 2, Either Side(1,3) NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first, OE or CE. 3. R/W = VIH. 4. Start of valid data depends on which timing becomes effective, tAOE, tACE or tAA 5. tAA for RAM Address Access and tSAA for Semaphore Address Access. ADDRESS DATAOUT PREVIOUS DATA VALID DATA VALID tOH tOH tAA(5) tRC 2720 drw 08 2720 drw 09 CE DATAOUT VALID DATA(4) tPD tAOE (4) tACE OE tHZ (2) tLZ (1) tLZ(1) tPU 50% 50% ICC ISB CURRENT tHZ(2) |
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