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SFH4256-R 数据表(PDF) 3 Page - ams AG |
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SFH4256-R 数据表(HTML) 3 Page - ams AG |
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3 / 16 page ![]() SFH 4256 3 Version 1.5 | 2020-08-26 Characteristics I F = 70 mA; tp = 20 ms; TA = 25 °C Parameter Symbol Values Peak wavelength λ peak typ. 860 nm Centroid wavelength λ centroid typ. 850 nm Spectral bandwidth at 50% I rel,max (FWHM) ∆λ typ. 30 nm Half angle φ typ. 60 ° Dimensions of active chip area L x W typ. 0.2 x 0.2 mm x mm Rise time (10% / 90%) R L = 50 Ω; 0 t r typ. 12 ns Fall time (10% / 90%) R L = 50 Ω; 0 t f typ. 12 ns Forward voltage 4) V F typ. max. 1.6 V 2 V Forward voltage 4) I F = 500 mA; tp = 100 µs V F typ. max. 2.4 V 3 V Reverse current 3) V R = 5 V I R max. 10 µA Radiant intensity 1) I F = 500 mA; tp = 25 µs I e typ. 80 mW/sr Total radiant flux 5) Φ e typ. 40 mW Temperature coefficient of voltage TC V typ. -0.7 mV / K Temperature coefficient of brightness TC I typ. -0.5 % / K Temperature coefficient of wavelength TC λ typ. 0.3 nm / K Thermal resistance junction solder point real 6) R thJS real max. 280 K / W Thermal resistance junction ambient real 7) R thJA max. 500 K / W |
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