Philips Semiconductors

Preliminary specification

Three quadrant triacs

BTA212 series C

high commutation

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-mb

Thermal resistance

full cycle

-

-

1.5

K/W

junction to mounting base

half cycle

-

-

2.0

K/W

R

th j-a

Thermal resistance

in free air

-

60

-

K/W

junction to ambient

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

GT

Gate trigger current

2

V

T2+ G+

2

-

35

mA

T2+ G-

2

-

35

mA

T2- G-

2

-

35

mA

I

L

Latching current

V

T2+ G+

-

-

20

mA

T2+ G-

-

-

30

mA

T2- G-

-

-

20

mA

I

H

Holding current

V

-

-

15

mA

V

T

On-state voltage

I

-

1.3

1.6

V

V

GT

Gate trigger voltage

V

-

0.7

1.5

V

V

0.25

0.4

-

V

I

D

Off-state leakage current

V

-

0.1

0.5

mA

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

UNIT

dV

Critical rate of rise of

V

1000

-

V/

µs

off-state voltage

waveform; gate open circuit

dI

Critical rate of change of

V

3

14

A/ms

commutating current

snubber; gate open circuit

t

gt

Gate controlled turn-on

I

-

2

µs

time

dI

2 Device does not trigger in the T2-, G+ quadrant.

October 1997

2

Rev 1.000