3

OptiMOSTM5Power-Transistor,80V

ISC0605NLS

Rev.2.1,2023-01-13

Final Data Sheet

1Maximumratings

atTA=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

1)

ID

-

-

-

-

-

-

-

-

195

123

108

25

A

VGS=10V,TC=25°C

VGS=10V,TC=100°C

VGS=4.5V,TC=100°C2)

VGS=10V,TA=25°C,RthJA=50°C/W3)

Pulsed drain current

2)

ID,pulse

-

-

778

A

TA=25°C

Avalanche energy, single pulse

4)

EAS

-

-

370

mJ

ID=50A,RGS=25

Ω

Gate source voltage

VGS

-20

-

20

V

-

Power dissipation

Ptot

-

-

-

-

156

2.5

W

TC=25°C

TA=25°C,RthJA=50°C/W3)

Operating and storage temperature

Tj,Tstg

-55

-

150

°C

-

2Thermalcharacteristics

Table3Thermalcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Thermal resistance, junction - case

RthJC

-

0.5

0.8

°C/W -

Device on PCB,

6 cm² cooling area

3)

RthJA

-

-

50

°C/W -

1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature

as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual

environmental conditions.

2) See Diagram 3 for more detailed information

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

4) See Diagram 13 for more detailed information