UG8JL-AL5-2-R datasheet(2/3 Pages) UTC

2 / 3 page

UG8J

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R222-002,A

ABSOLUTE MAXIMUM RATING (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

Input Voltage

VIN

-5

IOUT

100

Output Current

IC(MAX)

100

Total Power Dissipation

150 (Note1)

Junction Temperature

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note 1. *120mW per element must not be exceeded.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

VI(OFF)

VCC=5V, IOUT=100µA

0.5

Input Voltage

VI(ON)

VOUT=0.3V, IOUT=5mA

1.3

Output Voltage

VO(ON)

IOUT=5mA, IIN=0.25mA

0.1

0.3

Input Current

IIN

VIN=5V

1.8

Output Current

IO(OFF)

VCC=50V, VIN=0V

0.5

µA

DC Current Gain

VOUT=5V, IOUT=10mA

Transition Frequency

VCE=10V, IE=-5mA, f=100MHz*

250

MHz

Input Resistance

3.29

4.7 6.11

KΩ

Resistance Ratio

R2/R1

Note * Transition frequency of the device.

EQUIVALENT CIRCUIT (The following characteristic apply to both DTr1 and DTr2)

(3)

(2)

(1)

DTr2

(4)

(5)

DTr1

R1=4.7kΩ

R2=4.7kΩ

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