Micropower Voltage Reference

AS1004

ASTEC Semiconductor

31

Electrical Characteristics

Electrical Characteristics are guaranteed over full junction temperature range (0 to 70

° C). Ambient temperature must be derated based

on power dissipation and package thermal characteristics.

AS1004-1.2

AS1004-2.5

Parameter

Symbol

Test Condition

Min

Typ

Max

Min

Typ

Max

Unit

Reverse Breakdown Voltage

1.231

1.235

1.239

2.480

2.500

2.520

V

0

1.225

1.235

1.245

2.470

2.500

2.530

V

Average Temperature

20

60

ppm/

°C

Coefficient

Minimum Operating Current

410

12

20

µA

Reverse Breakdown Voltage

0.5

1

0.5

1

mV

Change With Current

Over Temperature

0.5

1.5

0.5

1.5

mV

1 mA

6.5

10

6.5

10

mV

Over Temperature

6.5

20

6.5

20

mV

0.2

0.6

0.8

0.9

Ω

Over Temperature

1

1.5

1.5

Ω

Wide Band Noise

µA

10 Hz

≤ f ≤ 10 KHz

60

60

µV

Long Term Stability

° C ± 0.1° C

20

60

ppm/kH

AS1004-1.2 Reference Voltage vs.

Ambient Temperature

Figure 1

Figure 2

Typical Performance Curves

5000

0.5

00

0

0

∆T

-5

-10

10

20

30

40

50

60 70

Temperature (°C)

0.025 mV/ °C

0.002 %/ °C

20 ppm/ °C

Average Temperature Coefficient =

∆T

Calculating Average Temperature

Coefficient for the AS1004-1.2 Reference

°C)

1.225

1.230

1.235

1.240

1.245

–55

–15

25

85

125

–35

5

45

65

105

µA