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B772SS-P-AE3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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B772SS-P-AE3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() B772SS PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R206-089.B ■ TYPICAL CHARACTERICS Static Characteristics -Collector-Emitter voltage (V) 04 8 12 16 20 0 0. 4 0. 8 1. 2 1. 6 Case Temperature, Tc ( ℃) -IB=1mA -IB=2mA -IB=3mA -IB=4mA -IB=5mA -IB=6mA -IB=7mA -IB=8mA -IB=9mA Derating Curve of Safe Operating Areas 200 150 100 50 0 -50 0 50 100 150 S/b lim ite d Case Temperature, Tc ( ℃) 200 150 100 50 0 -50 Power Derating 0 4 8 12 Collector Output Capacitance -Collector-Base Voltage(v) 10 0 10 -1 10 -2 10 -3 10 1 10 2 10 3 10 0 IE=0 f=1MHz Current Gain - Bandwidth Product 10 1 10 2 10 3 10 0 VCE=5V Collector-Emitter Voltage Safe Operating Area Ic(max),DC Ic (max),Pulse 10m S 1m S Collector Current, Ic (A) 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 IB=8mA IB=8mA |
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