4

Three-State Leakage

Current

GND

6-

-

±0.5

-

±5-

±10

µA

HCT TYPES

High Level Input

Voltage

-

-

4.5 to

5.5

2-

-

2

-

2

-

V

Low Level Input

Voltage

-

-

4.5 to

5.5

-

-

0.8

-

0.8

-

0.8

V

High Level Output

Voltage

CMOS Loads

-0.02

4.5

4.4

-

-

4.4

-

4.4

-

V

High Level Output

Voltage

TTL Loads

-6

4.5

3.98

-

-

3.84

-

3.7

-

V

-7.8

6

5.48

-

-

5.34

-

5.2

-

V

Low Level Output

Voltage

CMOS Loads

0.02

4.5

-

-

0.1

-

0.1

-

0.1

V

Low Level Output

Voltage

TTL Loads

6

4.5

-

-

0.26

-

0.33

-

0.4

V

7.8

6

-

-

0.26

-

0.33

-

0.4

V

Input Leakage

Current

GND

-

5.5

-

-

±0.1

-

±1-

±1

µA

Quiescent Device

Current

GND

0

5.5

-

-

8

-

80

-

160

µA

Three-State Leakage

Current

GND

6-

-

±0.5

-

±5-

±10

µA

Additional Quiescent

Device Current Per

Input Pin: 1 Unit Load

(Note 4)

-2.1

-

4.5 to

5.5

-

100

360

-

450

-

490

µA

NOTE:

DC Electrical Specifications

(Continued)

PARAMETER

SYMBOL

TEST

CONDITIONS

UNITS

MIN

TYP

MAX

MIN

MAX

MIN

MAX

HCT Input Loading Table

INPUT

UNIT LOADS

HCT373

HCT573

OE

1.5

1.25

Dn

0.4

0.3

LE

0.6

0.65

NOTE: Unit Load is

tions table, e.g., 360

CD74HC373, CD74HCT373, CD54HC573, CD74HC573, CD74HCT573