Data Sheet G15612EJ1V0DS

2

µµµµPA2450

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

10

µA

Gate Leakage Current

±10

µA

Gate Cut-off Voltage

0.5

1.0

1.5

V

Forward Transfer Admittance

5.0

S

Drain to Source On-state Resistance

11

14

17.5

m

Ω

11.5

14.5

18.5

m

Ω

12.0

16.5

22.0

m

Ω

15.3

20.5

27.5

m

Ω

Input Capacitance

540

pF

Output Capacitance

200

pF

Reverse Transfer Capacitance

f = 1.0 MHz

120

pF

Turn-on Delay Time

40

ns

Rise Time

160

ns

Turn-off Delay Time

Ω

190

ns

Fall Time

200

ns

Total Gate Charge

9.0

nC

Gate to Source Charge

1.5

nC

Gate to Drain Charge

4.5

nC

Body Diode Forward Voltage

0.83

V

Reverse Recovery Time

300

ns

Reverse Recovery Charge

di/dt = 100 A /

µs

760

nC

TEST CIRCUIT 2 GATE CHARGE

TEST CIRCUIT 1 SWITCHING TIME

PG.

0

D.U.T.

τ = 1 s

µ

Duty Cycle

≤ 1%

τ

PG.

50

Ω

D.U.T.

Wave Form

Wave Form

10%

0

0

90%

90%

90%

10%

10%