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MIC4606 数据表(PDF) 21 Page - Microchip Technology |
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MIC4606 数据表(HTML) 21 Page - Microchip Technology |
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21 / 40 page ![]() 2017-2019 Microchip Technology Inc. DS20005604D-page 21 MIC4606 7.0 APPLICATION INFORMATION 7.1 Adaptive Dead Time The door lock/unlock circuit diagram, shown in Figure 7-2, is used to illustrate the importance of the adaptive dead-time feature of the MIC4606. For each phase, it is important that both MOSFETs are not conducting at the same time or VIN will be shorted to ground and current will “shoot through” the MOSFETs. Excessive shoot-through causes higher power dissipa- tion in the MOSFETs, voltage spikes and ringing. The high switching current and voltage ringing generate conducted and radiated EMI. Minimizing shoot-through can be done passively, actively or through a combination of both. Passive shoot-through protection can be achieved by imple- menting delays between the high and low gate drivers to prevent both MOSFETs from being on at the same time. These delays can be adjusted for different appli- cations. Although simple, the disadvantage of this approach is that it requires long delays to account for process and temperature variations in the MOSFET and MOSFET driver. Adaptive dead time monitors voltages on the gate drive outputs and switch node to determine when to switch the MOSFETs on and off. This active approach adjusts the delays to account for some of the variations, but it too has its disadvantages. High currents and fast switching voltages in the gate drive and return paths can cause parasitic ringing to turn the MOSFETs back on, even while the gate driver output is low. Another disadvantage is that the driver cannot monitor the gate voltage inside the MOSFET. Figure 7-1 shows an equivalent circuit of the high-side gate drive, including parasitic. FIGURE 7-1: MIC4606 Driving an External MOSFET. The internal gate resistance (RG_FET) and any external damping resistor (RG) isolate the MOSFET’s gate from the driver output. There is a delay between when the driver output goes low and the MOSFET turns off. This turn-off delay is usually specified in the MOSFET data sheet. This delay increases when an external damping resistor is used. FIGURE 7-2: Door Lock/Unlock Circuit. xHS xHB xHO EXTERNAL FET V DD CB R G R G_FET R ON R OFF C GD C GS MIC4606 V DD AHB AHO AHS ALO V SS ALI AHI μC 12 VDC EN M BHB BHO BHS BLO BLI BHI MIC4606-1 FULL-BRIDGE DRIVER Q1 1 μF I/O I/O J2 COMMUNICATIONS Unlock Lock V DD J1 POWER 1 μF 16V MIC5283 LDO 12V TO 3.3V 2.2 μF 10V 3.3 VDC 1 μF 2.2 μF DC MOTOR 12V 140 mA V SS I/O I/O I/O I/O Q2 f S = 20 kHz |
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