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MIC4606 数据表(PDF) 21 Page - Microchip Technology

部件名 MIC4606
功能描述  85V Full-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot-Through Protection
PDF  40 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

MIC4606 数据表(HTML) 21 Page - Microchip Technology

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 2017-2019 Microchip Technology Inc.
DS20005604D-page 21
MIC4606
7.0
APPLICATION INFORMATION
7.1
Adaptive Dead Time
The door lock/unlock circuit diagram, shown in
Figure 7-2, is used to illustrate the importance of the
adaptive dead-time feature of the MIC4606. For each
phase, it is important that both MOSFETs are not
conducting at the same time or VIN will be shorted to
ground and current will “shoot through” the MOSFETs.
Excessive shoot-through causes higher power dissipa-
tion in the MOSFETs, voltage spikes and ringing. The
high switching current and voltage ringing generate
conducted and radiated EMI.
Minimizing shoot-through can be done passively,
actively or through a combination of both. Passive
shoot-through protection can be achieved by imple-
menting delays between the high and low gate drivers
to prevent both MOSFETs from being on at the same
time. These delays can be adjusted for different appli-
cations. Although simple, the disadvantage of this
approach is that it requires long delays to account for
process and temperature variations in the MOSFET
and MOSFET driver.
Adaptive dead time monitors voltages on the gate drive
outputs and switch node to determine when to switch
the MOSFETs on and off. This active approach adjusts
the delays to account for some of the variations, but it
too has its disadvantages. High currents and fast
switching voltages in the gate drive and return paths
can cause parasitic ringing to turn the MOSFETs back
on, even while the gate driver output is low. Another
disadvantage is that the driver cannot monitor the gate
voltage inside the MOSFET. Figure 7-1 shows an
equivalent circuit of the high-side gate drive, including
parasitic.
FIGURE 7-1:
MIC4606 Driving an
External MOSFET.
The internal gate resistance (RG_FET) and any external
damping resistor (RG) isolate the MOSFET’s gate from
the driver output. There is a delay between when the
driver output goes low and the MOSFET turns off. This
turn-off delay is usually specified in the MOSFET data
sheet. This delay increases when an external damping
resistor is used.
FIGURE 7-2:
Door Lock/Unlock Circuit.
xHS
xHB
xHO
EXTERNAL
FET
V
DD
CB
R
G
R
G_FET
R
ON
R
OFF
C
GD
C
GS
MIC4606
V
DD
AHB
AHO
AHS
ALO
V
SS
ALI
AHI
μC
12 VDC
EN
M
BHB BHO BHS
BLO
BLI
BHI
MIC4606-1
FULL-BRIDGE
DRIVER
Q1
1 μF
I/O
I/O
J2
COMMUNICATIONS
Unlock
Lock
V
DD
J1
POWER
1 μF
16V
MIC5283
LDO
12V TO 3.3V
2.2 μF
10V
3.3 VDC
1 μF
2.2 μF
DC MOTOR
12V 140 mA
V
SS
I/O
I/O
I/O
I/O
Q2
f
S = 20 kHz



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