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BUV42 数据表(PDF) 3 Page - STMicroelectronics

部件名 BUV42
功能描述  SILICON NPN SWITCHING TRANSISTOR
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BUV42 数据表(HTML) 3 Page - STMicroelectronics

  BUV42 Datasheet HTML 1Page - STMicroelectronics BUV42 Datasheet HTML 2Page - STMicroelectronics BUV42 Datasheet HTML 3Page - STMicroelectronics BUV42 Datasheet HTML 4Page - STMicroelectronics BUV42 Datasheet HTML 5Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
tr
ts
tf
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
VCC =200V
IC =6A
VBB =-5V
IB1 =0.75A
RB2 =3.3
Ω
Tp =30
µs
0. 3
1
0.15
0.4
1.6
0.3
µs
µs
µs
ts
tf
tt
tc
INDUCT IVE LOAD
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
VCC =200V
Vcla mp = 250V
ICC =4A
IB =0.4A
VBB =-5V
RB2 =6.3
Ω
LC =2.5mH
1. 2
0.08
0.03
0.15
1.8
0.2
0.12
0.35
µs
µs
µs
µs
ts
tf
tt
tc
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
VCC = 200V
Vcla mp = 250V
ICC =4A
IB =0.4A
VBB =-5V
RB2 =6.3
Ω
LC =2.5mH
Tj =100
o C
1. 8
0. 2
0.08
0. 4
2.4
0.4
0.2
0.7
µs
µs
µs
µs
ts
tf
tt
Storage Time
Fall Time
Tail Time in Turn-on
VCC =200V
Vcla mp = 250V
ICC =4A
IB =0. 5A
VBB =0
RB2 =7.5
Ω
LC =2.5mH
2. 5
0. 4
0.15
µs
µs
µs
ts
tf
tt
Storage Time
Fall Time
Tail Time in Turn-on
VCC =200V
Vcla mp = 250V
ICC =4A
IB =0.4A
VBB =0
RB2 =7.5
Ω
LC =2.5mH
Tj =100
o C
4. 8
0. 7
0. 4
µs
µs
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 2%
BUV42
3/5



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