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BU2722DF 数据表(PDF) 3 Page - NXP Semiconductors |
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BU2722DF 数据表(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page  Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2722DF Fig.1. Switching times waveforms (64 kHz). Fig.2. Switching times definitions. Fig.3. Switching times test circuit. Fig.4. DC current gain. h FE = f (IC) Parameter T hs (Low and high gain) IC IB VCE ICsat IBend 16us 6.5us 5us t t t TRANSISTOR DIODE + 150 v nominal adjust for ICsat Lc Cfb D.U.T. LB IBend -VBB Rbe ICsat 90 % 10 % tf ts IBend IC IB t t - IBM BU2720/22DF 0.01 0.1 1 10 100 1 10 100 Ths = 25 C Ths = 85 C VCE = 5 V hFE IC / A November 1995 3 Rev 1.000 |
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