STF8NK100Z datasheet(2/13 Pages) STMICROELECTRONICS

部件名	STF8NK100Z

功能描述	N-CHANNEL 1000V - 1.60OHM - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH TM MOSFET

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 13 page

1 Electrical ratings

STF8NK100Z - STP8NK100Z

2/13

Electrical ratings

Table 1.

Absolute maximum ratings

Table 2.

Thermal data

Table 3.

Avalanche Characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

VDS

Drain-source Voltage (VGS=0)

1000

VDGR

Drain-gate Voltage

1000

VGS

Gate-Source Voltage

± 30

ID Note 1

Drain Current (continuous) at TC = 25°C

6.5

Drain Current (continuous) at TC = 100°C

4.3

IDM Note 2

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

160

Derating Factor

1.28

0.32

W/°C

VESD(G-S)

Gate source ESD (HBM-C=100pF, R=1.5K

Ω)

4000

dv/dt Note 3 Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)

2500

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-220

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

0.78

3.1

°C/W

Rthj-a

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature For Soldering

Purpose

300

°C

Symbol

Parameter

Value

Unit

IAR

Avalanche Current, Repetitive or

Not-Repetitive (pulse width limited by Tj max)

6.5

EAS

Single Pulse Avalanche Energy

(starting Tj= 25°C, ID=IAR, VDD=50V)

320

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