2SC2812 datasheet(1/3 Pages) ISC

部件名	2SC2812

功能描述	isc Silicon NPN Power Transistor

PDF	3 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1

isc Silicon NPN Power Transistor

2SC2812

DESCRIPTION

·

Collector-Emitter Sustaining Voltage-

: VCEO= 50V(Min.)

·

High Reliability

·

Low Collector Saturation Voltage

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

High ruggedness electronic ignitions

·

High voltage ignition coil driver

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

55

V

VCEO

Collector-Emitter peak Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

0.15

A

ICM

Collector Current-Pulse

0.3

A

PT

Total Power Dissipation @Ta=25℃

0.2

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

类似零件编号 - 2SC2812

制造商	部件名	数据表	功能描述
Sanyo Semicon Device	2SC2812	169Kb / 4P	2SA1179 PNP/NPN Transistor
Foshan Blue Rocket Elec...	2SC2812	981Kb / 6P	Silicon NPN transistor in a SOT-23 Plastic Package
SHIKUES Electronics	2SC2812	1Mb / 3P	Plastic-Encapsulate Transistors
Sanyo Semicon Device	2SC2812N	41Kb / 3P	2SA1179N
Sanyo Semicon Device	2SC2812N	40Kb / 4P	Low-Frequency General-Purpose Amp Applications

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