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2SD780 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD780 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc website: www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD780 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=0.1mA, Ib=0 60 -- -- V ICBO Collector Cutoff Current VCE= 50V; Ib=0 -- -- 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 -- -- 0.1 mA hFE DC Current Gain IC= 50mA; VCE= 1V 110 -- 400 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.3A; IB= 30mA -- -- 0.6 V COb Output capacitance VCB=6V;IE= 0,f=1.0MHZ -- 7.0 -- pF fT Current-Gain—Bandwidth Product IE= -10mA ; VCE= 6V -- 140 -- MHz hFE Classifications Marking 1 2 3 4 5 hFE 110-180 135-220 170-270 200-320 250-400 |
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