RF101L4S

Diodes

1/3

Fast recovery diode

RF101L4S

Applications

Dimensions (Unit : mm)

Land size figure (Unit : mm)

General rectification

Features

1) Small power mold type

(PMDS)

2) Ultra low VF

3) Ultra high switching speed

4) Low switching loss

Constructure

Silicon epitaxial planar

Structure

Taping dimensions (Unit : mm)

Absolute maximum ratings (Ta=25

°C)

Symbol

Unit

V

V

Io

A

A

Tj

℃

Tstg

℃

-55 to +150

Parameter

Reverse voltage (DC)

Reverse voltage (repetitive)

Limits

400

400

1

20

150

Average rectified forward current

Junction temperature

Forward current surge peak （60Hz・1cyc）

(*1)Mounting on epoxy board. 180°Half sine wave

Storage temperature

Electrical characteristic (Ta=25

°C)

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

-

-

1.25

V

--

10

µA

Reverse recovery time

trr

-

-

25

ns

Conditions

Reverse current

Parameter

4.0±0.1

2.9±0.1

4.0±0.1

2.0±0.05

φ1.55±0.05

φ1.55

0.3

2.8MAX

PMDS

2.0

ROHM : PMDS

JEDEC : SOD-106

①

Manufacture date

②

①

②

6

6

0.1±0.02

　　　 0.1

2.6±0.2

2.0±0.2

1.5±0.2