Nexperia

PESDxUSB3S series

ESD protection for differential data lines

6. Characteristics

6.1. Channel characteristics

Table 6. Channel characteristics

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

Cd

diode capacitance

f = 1 MHz; VI = 2.5 V

[1] -

0.45

-

pF

IRM

reverse leakage current per line; VI = 5 V

-

1

100

nA

VBR

breakdown voltage

IR = 1 mA

6

9

-

V

VF

forward voltage

IF = 10 mA

-

0.8

-

V

TLP

[2]

• positive transient

-

0.16

-

Ω

• negative transient

-

0.16

-

Ω

surge

[3]

• positive transient

-

0.25

-

Ω

Rdyn

dynamic resistance

• negative transient

-

0.25

-

Ω

[1] This parameter is guaranteed by design.

[2] 100 ns Transmission Line Pulse (TLP); 50 Ω; pulser at 70 to 90 ns.

[3] According to IEC 61000-4-5 (8/20 μs).

6.2. Frequency characteristics

Table 7. Frequency characteristics

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

Differential mode: Sdd21

f-3dB

cut-off frequency

[1] -

17

-

GHz

[1] Normalized to attenuation at 1 MHz.

aaa-021319

-3

-5

-1

1

Sdd21

(dB)

-7

f (Hz)

107

1011

1010

108

109

Sdd21 pin 5 - 6

Sdd21 pin 1 - 2

Fig. 1. Differential mode insertion loss; typical values

aaa-021320

-40

-60

-20

0

Sdd21

(dB)

-80

f (Hz)

108

1011

1010

109

Sdd21 A3-A4 > C1-C2

Sdd21 A5-A6 > C1-C2

Fig. 2. Differential cross-talk; typical values

PESDXUSB3S_SER

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© Nexperia B.V. 2019. All rights reserved

Product data sheet

Rev. 4 — 30 January 2019

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