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2N60L-TN3-R 数据表(PDF) 7 Page - Unisonic Technologies |
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2N60L-TN3-R 数据表(HTML) 7 Page - Unisonic Technologies |
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7 / 8 page ![]() 2N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 7 of 8 www.unisonic.com.tw QW-R502-053,E TYPICAL CHARACTERISTICS(Cont.) -100 Junction Temperature, TJ (℃) -50 50 200 VGS=10V ID=250μA 100 150 1.2 Breakdown Voltage vs. Temperature 0 1.1 1.0 0.9 0.8 -100 Junction Temperature, TJ (℃) -50 50 200 VGS=10V ID=4.05A 100 150 3.0 On -Resistance vs. Temperature 0 2.0 1.0 0.5 0.0 1.5 2.5 10 1 10 0 10-2 Drain-Source Voltage, VDS (V) Max. Safe Operating Area 10 2 10 1 10 0 D C 10-1 100μs 1ms 10 3 Operation in This Area is Limited by RDS(on) 10μs 10m s TC=25℃ TJ=125℃ Single Pulse Case Temperature, TC (℃) 75 100 150 Max. Drain Current vs. Case Temperature 0.0 125 50 25 0.5 1.0 1.5 2.0 Square Wave Pulse Duration, t1 (s) Thermal Response 10 0 10-5 100 10 -1 10-4 10-3 10-2 10-1 10 1 Single pulse D=0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 θJC (t) = 2.78℃/W Max. Duty Factor, D=t1/t2 TJM-TC=PDM×θJC (t) |
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