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2N60-TM3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 2N60-TM3-R
功能描述  2 Amps, 600 Volts N-CHANNEL MOSFET
PDF  8 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2N60-TM3-R 数据表(HTML) 2 Page - Unisonic Technologies

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2N60
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-053,E
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
2.0
A
TC = 25°C
2.0
A
Drain Current Continuous
TC = 100°C
ID
1.26
A
Drain Current Pulsed (Note 2)
IDP
8.0
A
Repetitive(Note 2)
EAR
4.5
mJ
Avalanche Energy
Single Pulse(Note 3)
EAS
140
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TC = 25°C
45
W
Total Power Dissipation
Derate above 25°C
PD
0.36
W/℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
RATINGS
UNIT
TO-251
112
TO-252
112
TO-220
54
Thermal Resistance Junction-Ambient
TO-220F
θJA
54
TO-251
12
TO-252
12
TO-220
4
Thermal Resistance Junction-Case
TO-220F
θJc
4
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
600
V
VDS = 600V, VGS = 0V
10
µA
Zero Gate Voltage Drain Current
IDSS
VDS = 480V, TC = 125°C
100
µA
Forward
VGS = 30V, VDS = 0V
100
nA
Gate-Body Leakage Current
Reverse
IGSS
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature
Coefficient
△
BVDSS/
T
△ J
ID = 250 µA
0.4
V/℃
On Characteristics
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON) VGS = 10V, ID =1A
3.8
5
Ω
Forward Transconductance
gFS
VDS = 50V, ID = 1A (Note 1)
2.25
S
Dynamic Characteristics
Input Capacitance
CISS
270
350
pF
Output Capacitance
COSS
40
50
pF
Reverse Transfer Capacitance
CRSS
VDS =25V, VGS =0V, f =1MHz
5
7
pF



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