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2N60L-TM3-R 数据表(PDF) 6 Page - Unisonic Technologies

部件名 2N60L-TM3-R
功能描述  2 Amps, 600 Volts N-CHANNEL MOSFET
PDF  8 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2N60L-TM3-R 数据表(HTML) 6 Page - Unisonic Technologies

  2N60L-TM3-R Datasheet HTML 1Page - Unisonic Technologies 2N60L-TM3-R Datasheet HTML 2Page - Unisonic Technologies 2N60L-TM3-R Datasheet HTML 3Page - Unisonic Technologies 2N60L-TM3-R Datasheet HTML 4Page - Unisonic Technologies 2N60L-TM3-R Datasheet HTML 5Page - Unisonic Technologies 2N60L-TM3-R Datasheet HTML 6Page - Unisonic Technologies 2N60L-TM3-R Datasheet HTML 7Page - Unisonic Technologies 2N60L-TM3-R Datasheet HTML 8Page - Unisonic Technologies  
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2N60
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
6 of 8
www.unisonic.com.tw
QW-R502-053,E
TYPICAL CHARACTERISTICS
10
0
10-1
10
-2
10
1
10-1
100
Drain-Source Voltage, VDS (V)
V GS
Top: 15.0V
10 .0V
8 .0V
7 .0V
6 .5V
6 .0V
Bottorm :
5.5V
10
0
10
-1
2
Gate-Source Voltage, VGS (V)
Transfer Characteristics
46
8
10
-20℃
85℃
25℃
250μs Pulse Test
TC=25℃
On-Region Characteristics
VDS=50V
250μs Pulse Test
0
0
Drain Current, ID (A)
1
2
VGS=10V
VGS=20V
2
4
8
10
12
On-Resistance Variation vs. Drain Current and
Gate Voltage
6
34
56
TJ=25℃
10
0
10
-1
0.2
Source-Drain Voltage, VSD (V)
Body Diode Forward Voltage Variationvs.
Source Current and Temperature
1.6
25℃
0.4
0.6
0.8
1.0
1.2
1.4
125℃
VGS=0V
250μs Pulse Test
500
0
10
-1
Drain-Source Voltage, VDS (V)
Capacitancevs. Drain-Source Voltage
400
100
100
101
Crss
Coss
Ciss=CGS+CGD
(CDS=shorted)
Coss=CDS+CGD
Crss=CGD
Ciss
VGS=0V
f = 1MHz
300
200
0
Total Gate Charge, QG (nC)
2
61
0
ID=2.4A
8
10
12
Gate Charge vs. Gate Charge Voltage
4
6
4
2
0
VDS=120V
VDS=300V
VDS=480V
8



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