Nexperia

PHDMI2AB4

ESD protection for ultra high-speed interfaces

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VI

input voltage

-5

5

V

IPPM

rated peak pulse current tp = 8/20 µs

-

7

A

Tstg

storage temperature

-55

125

°C

Tamb

ambient temperature

-40

85

°C

ESD maximum ratings

IEC 61000-4-2, level 4; contact discharge [1]

-15

15

kV

VESD

electrostatic discharge

voltage

IEC 61000-4-2, level 4; air discharge

[1]

-15

15

kV

[1] All pins to ground.

8. Characteristics

Table 5. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBR

breakdown voltage

II = 1 mA

6

9

-

V

ILR

reverse leakage

current

per channel; VI = 5 V

-

1

100

nA

Cline

line capacitance

f = 1 MHz; VI = 1.5 V

[1]

-

0.17

0.2

pF

TPL; positive transient

[2]

-

0.4

-

Ω

rdyn

dynamic resistance

TPL; negative transient

[2]

-

0.4

-

Ω

IPP = 5 A; positive transient

[3]

-

5

-

V

VCL

clamping voltage

IPP = -5 A; negative transient

[3]

-

-5

-

V

[1] This parameter is guaranteed by design.

[2] 100 ns Transmission Line Pulse (TLP); 50 Ω; pulser at 80 ns.

[3] According to IEC 61000-4-5 (8/20 μs current waveform).

PHDMI2AB4

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© Nexperia B.V. 2018. All rights reserved

Product data sheet

8 June 2018

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