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75N75-TF3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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75N75-TF3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 8 page ![]() 75N75 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-097,A ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source-Drain Diode Ratings and Characteristics Continuous Source Current IS 75 Pulsed Source Current ISM 300 A Diode Forward Voltage VSD IS = 48A, VGS = 0 V 1.4 V Reverse Recovery Time trr 90 ns Reverse Recovery Charge Qrr IS = 48A, VGS = 0 V dIF / dt = 100 A/µs 300 µC Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.24mH, IAS=48A, RG=20Ω, Starting TJ=25℃ 3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature. |
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