| 数据搜索系统,热门电子元器件搜索 |
|
B1D08065KS 数据表(PDF) 3 Page - BASIC SEMICONDUCTOR |
|
|
|||||||||||||||||||||||||||||
B1D08065KS 数据表(HTML) 3 Page - BASIC SEMICONDUCTOR |
|
3 / 7 page ![]() Rev. 0.1 www.basicsemi.com 3 / 7 Electrical Characteristics Static Characteristics AC Characteristics Symbol Parameter Test conditions Value Unit Min. Typ. Max. VDC DC blocking voltage Tj=25°C 650 V VF Diode forward voltage IF=8A Tj=25°C IF=8A Tj=175°C 1.46 1.73 V IR Reverse current VR=650V Tj=25°C VR=650V Tj=175°C 1 10 μA Symbol Parameter Test conditions Value Unit Min. Typ. Max. QC Total capac itive charge VR=400V Tj=25°C ������������ = ∫ C(V)dV VR 0 24 nC C Total capacitance VR=1V f=1MHz VR=300V f=1MHz VR=600V f=1MHz 365 41.1 40.7 pF EC Capacitance stored energy VR=400V 6 μJ B1D08065KS SiC Schottky Diode |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |