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STP120NF10 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP120NF10
功能描述  N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP120NF10 数据表(HTML) 3 Page - STMicroelectronics

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STW120NF10 - STP120NF10 - STB120NF10
Electrical ratings
3/15
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
100
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
110
A
ID
Drain current (continuous) at TC=100°C
77
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
440
A
PTOT
Total dissipation at TC = 25°C
312
W
Derating factor
2.08
W/°C
dv/dt (2)
2.
ISD < 120A, di/dt < 300A/µs, VDD = 80%V(BR)DSS
Peak diode recovery voltage slope
10
V/ns
EAS
(3)
3.
Starting Tj = 25°C, ID = 60A, VDD = 50V
Single pulse avalanche energy
550
mJ
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
TL
Maximum lead temperature for soldering purpose
300
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
0.48
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W



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