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STTH3002C 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH3002C
功能描述  High efficiency ultrafast diode
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH3002C 数据表(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH3002C
4/11
Figure 3.
Forward voltage drop versus
forward current (maximum values,
per diode)
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
0
10
20
30
40
50
60
70
80
90
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I(A)
FM
V(V)
FM
T =25°C
j
T =150°C
j
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z/R
th(j-c)
th(j-c)
Single pulse
t(s)
p
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values, per diode)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values, per diode)
10
100
1000
0
50
100
150
200
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25°C
OSC
RMS
j
0
25
50
75
100
125
150
175
200
225
250
10
100
1000
Q (nC)
rr
dI /dt(A/µs)
F
I =15A
F
V =160V
R
T =125°C
j
T =25°C
j
Figure 7.
Reverse recovery time versus
dIF/dt (typical values, per diode)
Figure 8.
Peak reverse recovery current
versus dIF/dt (typical values, per
diode)
0
10
20
30
40
50
60
70
10
100
1000
t (ns)
rr
dI /dt(A/µs)
F
T =25°C
j
T =125°C
j
I =15A
F
V =160V
R
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
10
100
1000
I
(A)
RM
dI /dt(A/µs)
F
T =25°C
j
T =125°C
j
I =15A
F
V =160V
R



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