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DA1016B.001

27 January, 2004

PAD LAYOUT

DIE size = 1.79 x 1.79 mm; PAD size = 100 x 100

µm

Note: Because the substrate of the die is internally connected to VDD, the die has to be connected to VDD or

left floating. Please make sure that VDD is the first pad to be bonded. Pick-and-place and all component

assembly are recommended to be performed in ESD protected area.

Note: Coordinates are pad center points where origin has been located in the center of VDD pad

Pad Identification

Name

X-coordinate

Y-coordinate

Note

Power Supply Voltage

VDD

0

µm

0

µm

Quarz Filter Output

QO

306

µm

19

µm

Quarz Filter Input

QI

587

µm

19

µm

AGC Capacitor

AGC

866

µm

19

µm

Receiver Output

OUT

1143

µm

19

µm

1

Demodulator Capacitor

DEC

1111

µm

1436

µm

AGC On Control

AON

868

µm

1436

µm

2

Power Down Input

PDN

551

µm

1436

µm

3

Receiver Input

RFI

309

µm

1436

µm

Power Supply Ground

VSS

16

µm

1415

µm

Notes:

1) OUT = VSS when carrier amplitude at maximum; OUT = VDD when carrier amplitude is reduced

(modulated)

-

-

at power down the output is high impedance

2) AON = VSS means AGC off (hold current gain level); AON = VDD means AGC on (working)

-

Internal pull-up with current < 1

µA which is switched off at power down

3) PDN = VSS means receiver on; PDN = VDD means receiver off

MAS1016B

VDD QO

QI AGC OUT

VSS RFI PDN AON DEC

1788 µm

1786 µm