Nexperia

PMPB07R0UN

20 V, N-channel Trench MOSFET

aaa-032235

1

10-1

10

102

ID

(A)

10-2

VDS (V)

10-1

102

10

1

tp = 100 ms

tp = 10 ms

tp = 1 ms

tp = 100 µs

tp = 10 µs

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

DC; Tsp = 25 °C

Limit RDSon = VDS/ID

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

PMPB07R0UN

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Product data sheet

13 October 2020

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