Nexperia

PMPB08R6EN

30 V, N-channel Trench MOSFET

aaa-032244

1

10-1

10

102

ID

(A)

10-2

VDS (V)

10-1

102

10

1

tp = 100 ms

tp = 10 ms

tp = 1 ms

tp = 100 µs

tp = 10 µs

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

DC; Tsp = 25 °C

Limit RDSon = VDS/ID

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

PMPB08R6EN

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2020. All rights reserved

Product data sheet

13 October 2020

4 / 15