UT3415

POWER MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 9

www.unisonic.com.tw

QW-R210-074.C



ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =-250 µA

-20

V

Drain-Source Leakage Current

IDSS

VDS=-20V, VGS=0V

-1.0

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+8V, VDS=0V

+100 nA

Reverse

VGS=-8V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS= VGS, ID=-250μA

-0.3

-0.9

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=-4.5V, ID=-4.0A

45

mΩ

VGS=-2.5V, ID=-4.0A

62

mΩ

VGS=-1.8V, ID=-2.0A

84

mΩ

VGS=-1.5V, ID=-1.0A

105 mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=-10V, f=1.0MHz

1000

pF

Output Capacitance

COSS

200

pF

Reverse Transfer Capacitance

CRSS

170

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

VDS=-10V, VGS=-10V, ID=-4.0A ,

IG=-1mA (Note 1, 2)

30

nC

Gate to Source Charge

QGS

1.5

nC

Gate to Drain Charge

QGD

4

nC

Turn-ON Delay Time

tD(ON)

VDD=-10V, VGS=-10V, ID=-4.0A,

RG=3Ω (Note 1, 2)

4

ns

Rise Time

tR

17

ns

Turn-OFF Delay Time

tD(OFF)

44

ns

Fall-Time

tF

26

ns

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

IS

-4

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

-8

A

Diode Forward Voltage

VSD

IF=-4.0A, VGS=0V

-1.4

V

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.