©2006 SST Communications Corp.

S71304-01-000

9/06

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Preliminary Specifications

Features:

•

High Gain:

– Typically 27-28 dB gain across 2.4-2.5 GHz

– Typically 30-34 dB gain across 4.9-5.8 GHz

•

High linear output power:

– >25 dBm P1dB (Pulsed single-tone signal) across

2.4-2.5 GHz

– Meets 802.11b OFDM ACPR requirement up to

21.5 dBm across 2.4-2.5 GHz

– Meets 802.11g OFDM ACPR requirement up to

22 dBm across 2.4-2.5 GHz

– Added EVM~4% up to 19 dBm for

54 Mbps 802.11g signal across 2.4-2.5 GHz

– >25 dBm P1dB (Pulsed single-tone signal)

across 4.9-5.8 GHz

– Meets 802.11a OFDM ACPR requirement up to

22 dBm across 4.9-5.8GHz

– Added EVM~4% up to 18 dBm for

54 Mbps 802.11a signal across 4.9-5.8GHz

•

High power-added efficiency/Low operating

current for 802.11a/b/g applications

•

•

Low idle current

•

High-speed power-up/down

– Turn on/off time (10%-90%) <100 ns

– Typical power-up/down delay with driver delay

included <200 ns

•

High temperature stability

– ~2/1 dB gain/power variation between 0°C to

+85°C across 2.4-2.5 GHz

– ~8/2 dB gain/max linear power variation between

0°C to +85°C across 4.9-5.8 GHz

– ~1 dB detector variation over 0°C to +85°C

•

Low shut-down current (< 0.1 µA)

•

On-chip power detection

•

20 dB dynamic range on-chip power detection

•

Simple input/output matching

•

Packages available

– 24-lead WQFN (4mm x 4mm)

– Non-Pb (lead-free) packages available

Applications:

•

WLAN (IEEE 802.11a/g/b)

•

Japanese WLAN

•

HyperLAN2

•

Multimedia

•Home RF

•

Cordless phones

Product Description

The SST13LP02 is a high-efficiency, dual-band power

amplifier based on the highly-reliable InGaP/GaAs HBT

technology.

The SST13LP02 can be easily configured for high-power

applications with superb power-added efficiency while

operating over the 802.11a/b/g frequency band for U.S.,

European, and Japanese markets (2.4-2.5 GHz and 4.9-

5.8 GHz).

The SST13LP02 has excellent linearity, typically ~4%

added EVM at 19 dBm output power, which is essential for

54 Mbps 802.11g operation while meeting 802.11g spec-

trum mask at 22 dBm and 802.11b spectrum mask at 21.5

dBm. For 802.11a operation, the SST13LP02 has demon-

strated typically ~4% added EVM at 18 dBm output power

while meeting 802.11a spectrum mask at 22 dBm. The

SST13LP02 also has wide-range (>15 dB), temperature-

stable (~1.5 dB over 85°C), single-ended power detectors

which lower users’ cost on power control.

The power amplifier IC also features easy board-level

usage along with high-speed power-up/down control.

SST13LP02 controllable by an on/off switching signal

directly from the baseband chip. These features, coupled

with low operating current, make the SST13LP02 ideal

for the final stage power amplification in both battery-

powered 802.11a/b/g WLAN transmitters and access

point applications.

The SST13LP02 is offered in a 24-contact WQFN package.

See Figure 2 for pin assignments and Table 1 for pin

descriptions.

2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier

SST13LP02

SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier