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TDA7294S 数据表(PDF) 6 Page - STMicroelectronics |
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TDA7294S 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 16 page ![]() TDA7294S 6/16 (*) R1 = R3 for pop optimization (**) Closed Loop Gain has to be ≥ 26dB (***) Multiply this value for the number of modular part connected Figure 5. Slave function: pin 4 (Ref to pin 8 -VS) Note: If in the application, the speakers are connected via long wires, it is a good rule to add between the output and GND, a Boucherot Cell, in order to avoid dangerous spurious oscillations when the speakers terminal are shorted. The suggested Boucherot Resistor is 3.9 Ω/2W and the capacitor is 1µF. 4 Introduction In consumer electronics, an increasing demand has arisen for very high power monolithic audio amplifiers able to match, with a low cost, the performance obtained from the best discrete designs. The task of realizing this linear integrated circuit in conventional bipolar technology is made extremely dif- ficult by the occurence of 2nd breakdown phoenomenon. It limits the safe operating area (SOA) of the pow- er devices, and, as a consequence, the maximum attainable output power, especially in presence of highly reactive loads. Moreover, full exploitation of the SOA translates into a substantial increase in circuit and layout complexity due to the need of sophisticated protection circuits. To overcome these substantial drawbacks, the use of power MOS devices, which are immune from sec- ondary breakdown is highly desirable. The device described has therefore been developed in a mixed bi- polar-MOS high voltage technology called BCDII 100. 4.1 Output Stage The main design task in developping a power operational amplifier, independently of the technology used, is that of realization of the output stage. The solution shown as a principle shematic by Fig.5 represents the DMOS unity - gain output buffer of the TDA7294S. COMPONENTS SUGGESTED VALUE PURPOSE LARGER THAN SUGGESTED SMALLER THAN SUGGESTED C4 10 µFST-BY TIME CONSTANT LARGER ST-BY ON/OFF TIME SMALLER ST-BY ON/ ON/OFF TIME; POP NOISE C5 22 µFXN (***) BOOTSTRAPPING SIGNAL DEGRADATION AT LOW FREQUENCY C6, C8 1000 µFSUPPLY VOLTAGE BYPASS C7, C9 0.1 µFSUPPLY VOLTAGE BYPASS DANGER OF OSCILLATION Table 6. Application Suggestions (continued) MASTER UNDEFINED SLAVE -VS +3V -VS +1V -VS D98AU821 |
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