2 (9)

DA9179.002

19 May, 2005

PAD LAYOUT

QO2

QO1

QI

OUT

AGC

VSS

RFI2

RFIM

RFI3

PDN1

1620 µm

PDN2

DEC

QO3

RFIP

AON

MAS9179Ax,

x=1..4

VDD

DIE size = 1.62 x 1.89 mm; round PAD

∅ 80 µm

Note: Because the substrate of the die is internally connected to VDD, the die has to be connected to VDD or

left floating. Please make sure that VDD is the first pad to be bonded. Pick-and-place and all component

assembly are recommended to be performed in ESD protected area.

Note: Coordinates are pad center points where origin has been located in bottom-left corner of the silicon die.

Pad Identification

Name

X-coordinate

Y-coordinate

Note

Power Supply Voltage

VDD

174

µm

1657

µm

Quartz Filter Output for Crystal 2

QO2

174

µm

1452

µm

Quartz Filter Output for Crystal 1

QO1

174

µm

1248

µm

Quartz Filter Output for Crystal 3

QO3

174

µm

1043

µm

Quartz Filter Input for Crystals

QI

174

µm

839

µm

AGC Capacitor

AGC

174

µm

634

µm

Power Down/Frequency Selection Input 2

PDN2

174

µm

429

µm

3

Receiver Output

OUT

175

µm

225

µm

1

Demodulator Capacitor

DEC

1442

µm

240

µm

AGC On Control

AON

1442

µm

444

µm

2

Power Down/Frequency Selection Input 1

PDN1

1442

µm

649

µm

3

Receiver Input 3 (for Antenna Capacitor 3)

RFI3

1442

µm

853

µm

Positive Receiver Input

RFIP

1442

µm

1058

µm

4

Negative Receiver Input

RFIM

1442

µm

1262

µm

4

Receiver Input 2 (for Antenna Capacitor 2)

RFI2

1442

µm

1467

µm

Power Supply Ground

VSS

1442

µm

1671

µm

Notes:

1) OUT = VSS when carrier amplitude at maximum; OUT = VDD when carrier amplitude is reduced

(modulated)

-

-

at power down the output is pulled to VSS (pull down switch)

2) AON = VSS means AGC off (hold current gain level); AON = VDD means AGC on (working)

-

Internal pull-up with current < 1

µA which is switched off at power down

3) PDN1 = VDD and PDN2 = VDD means receiver off

-

Fast start-up is triggered when the receiver is after power down controlled to power up

4) Receiver inputs RFIP and RFIM have both 600 k

Ω biasing MOSFET-transistors towards ground