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2N3773 数据表(PDF) 3 Page - STMicroelectronics

部件名 2N3773
功能描述  High power NPN silicon transistor
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

2N3773 数据表(HTML) 3 Page - STMicroelectronics

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2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEV
Collector cut-off current
(VBE = -1.5V)
VCB = 140V
VCB = 140V
Tj = 150°C
2
10
mA
mA
ICEO
Collector cut-off current
(IB = 0)
VCB = 120V
10
mA
ICBO
Collector cut-off current
(IE = 0)
VCB = 140V
2mA
IEBO
Emitter cut-off current
(IC = 0)
VCB = 7V
5mA
VCEO(sus) (1)
Collector-emitter
sustaining voltage
(IB = 0)
IC = 0.2A
140
V
VCEV(sus) (1)
Collector-emitter
sustaining voltage
(VEB = -1.5V)
IC = 0.2A
160
V
VCER(sus) (1)
Collector-emitter
sustaining voltage
(RBE = 100Ω)
IC = 0.2A
150
V
VCE(sat) (1)
1. Pulsed: Pulse duration = 300
µs, duty cycle ≤ 2 %
Collector-emitter
saturation voltage
IC = 8A
IB = 0.8A
IC = 16A
IB = 3.2A
1.4
4
V
V
VBE (1)
Base-emitter voltage
IC = 8A
VCE = 4V
2.2
V
hFE (1)
DC current gain
IC = 8A
VCE = 4V
IC = 16A
VCE = 4V
15
5
60
Is/b
Second Breakdown
Collector Current
VCE = 30V
t = 1s (non repetitive)
5A



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