2N5195 datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.12

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = rated VCBO

-0.1

ICEX

Collector Cut-off

Current (VBE = -1.5V)

VCE = rated VCEO

Tc = 125

-0.1

-2

ICEO

Collector Cut-off

Current (IB = 0)

VCE = rated VCEO

-1

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-1

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = -100 mA

-80

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -1.5 A

IB = -0.15 A

IC = -4 A

IB = -1 A

-0.6

-1.2

VBE

∗

Base-Emitter Voltage

IC = -1.5 A

VCE = -2 V

-1.2

hFE

∗

DC Current Gain

IC = -1.5 A

VCE = -2 V

IC = -4 A

VCE = -2 V

Transition frequency

IC = -1 A

VCE = -10 V

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Derating Curves

2N5195

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