2SD2012 datasheet(2/5 Pages) STMICROELECTRONICS

部件名	2SD2012

功能描述	NPN SILICON POWER TRANSISTOR

PDF	5 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 5 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 60 V

100

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 7 V

100

µA

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 50 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 0.2 A

0.4

VBE

∗

Base-Emitter Voltage

IC = 0.5 A

VCE = 5 V

0.75

hFE

∗

DC Current Gain

IC = 0.5 A

VCE = 5 V

IC = 2 A

VCE = 5 V

100

320

Transition frequency

VCE = 5 V

IC = 0.5 A

MHz

CCBO

Collector-Base

Capacitance

VCB = 10 V

IE = 0

f = 1 MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

Safe Operating Area

Derating Curve

2SD2012

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