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D1665 数据表(PDF) 4 Page - STMicroelectronics

部件名 D1665
功能描述  Low voltage fast-switching NPN power transistor
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

D1665 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
2STD1665
4/12
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 120V
VCB = 120V
TJ = 100°C
50
1
nA
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 7V
10
nA
V(BR)CBO (1)
1.
Pulsed duration = 300
µs, duty cycle ≤1.5%.
Collector-base
breakdown voltage
(IE = 0)
IC = 100µA
150
V
V(BR)CEO (1)
Collector-emitter
breakdown voltage
(IB = 0)
IC = 10mA
65
V
V(BR)EBO (1)
Emitter-base
breakdown voltage
(IC = 0)
IE = 100µA
7V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 100mA
IB = 5mA
IC = 1A
IB = 50mA
IC = 2A
IB = 50mA
IC = 6A
IB = 150mA
IC = 6A
IB = 300mA
50
70
140
290
320
350
380
V
V
V
V
V
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 4A
IB = 200mA
11.15
V
VBE(on) (1)
Base-emitter On
voltage
IC = 4A
VCE = 1V
0.89
1
V
hFE
DC current gain
IC = 10mA
VCE = 1V
IC = 2A
VCE = 1V
IC = 5A
VCE = 1V
IC = 10A
VCE = 1V
150
150
90
30
300
270
140
50
350
CCBO
Collector-base
capacitance
VCB = 10V
f = 1MHz
47
pF
tON
ts
tf
Resistive load
Turn-on time
Storage time
Fall time
IC = 3A
VCC = 10V
IB1 = -IB2 = 0.3A
90
800
90
ns
ns
ns



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