2STW4468 datasheet(3/9 Pages) STMICROELECTRONICS

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2STW4468

Electrical characteristics

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Electrical characteristics

(TCASE = 25°C; unless otherwise specified)

Table 3.

Electrical characteristics

Note: 1 Pulsed duration = 300

µs, duty cycle ≤1.5%

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 200V

0.1

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 6V

0.1

µA

V(BR)CEO(1)

Collector-emitter breakdown

voltage (IB = 0)

IC = 50mA

140

V(BR)CBO

Collector-emitter breakdown

voltage (IE = 0)

IC = 100µA

200

V(BR)EBO(1)

Collector-emitter breakdown

voltage (IC = 0)

IE = 1mA

VCE(sat) (1)

Collector-emitter saturation

voltage

IC = 5A

IB = 500mA

IC = 7A

IB = 700mA

0.5

0.7

VBE

Base-emitter voltage

VCE = 5V

IC = 5A

1.3

hFE

DC current gain

IC = 3A

VCE = 4V

IC = 5A

VCE = 4V

140

Transition frequency

IC = 0.5A

VCE = 12V

MHz

CCBO

Collector-base capacitance

IE = 0 VCB = 10V f = 1MHz

150

ton

tstg

toff

Resistive Load

Turn-on time

Storage time

Fall time

IC = 5A

VCC = 60V

IB1 = -IB2 = 0.5A

0.22

4.3

0.5

µs

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