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N83003 数据表(PDF) 4 Page - STMicroelectronics

部件名 N83003
功能描述  High voltage fast-switching NPN power transistor
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

N83003 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STN83003
4/11
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICEV
Collector cut-off current
(VBE = -1.5V)
VCE = 700V
VCE = 700V
Tj = 125°C
1
5
mA
mA
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 10mA
12
18
V
VCE(sus) (1)
1.
Pulsed duration = 300
µs, duty cycle ≤1.5%
Collector-emitter
sustaining voltage
(IB = 0)
IC = 10mA
L = 25mH
400
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 0.35A
IB = 50mA
IC = 0.5A
IB = 0.1A
1
0.5
V
V
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 0.5A
IB = 0.1A
1V
hFE
DC current gain
IC = 10mA
VCE = 5V
IC = 0.35A
VCE = 5V
IC = 1A
VCE = 5V
10
16
4
25
32
tr
ts
tf
Resistive load
Rise time
Storage time
Fall time
IC = 0.35A
VCC = 125V
IB1 = -IB2 = 70mA
TP ≥ 25µs
(see figure 10)
1.5
100
2.2
0.2
2.9
ns
µs
µs
ts
tf
Inductive load
Storage time
Fall time
IC = 0.5A
IB1 = 0.1A
VBE(off) = -5V
L = 10mH
VClamp = 300V
(see figure 9)
450
90
ns
ns



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