STPS30100ST datasheet(3/7 Pages) STMICROELECTRONICS

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STPS30100ST

Characteristics

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Figure 1.

Conduction losses versus average

current

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5)

12162024283236

PF(av)(W)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=t /T

I (av)(A)

100

125

150

IF(av)(A)

Rth(j-a)=Rth(j-c)

Rth(j-a)=15°C/W

δ=tp/T

(°C)

amb

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values)

Figure 6.

Relative variation of thermal

impedance junction to case versus

pulse duration

100

150

200

250

300

350

1.E-03

1.E-02

1.E-01

1.E+00

IM(A)

Tc=25°C

Tc=75°C

Tc=125°C

δ=0.5

t(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

Zth(j-c)/Rth(j-c)

tp(s)

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