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2STN2360 数据表(PDF) 3 Page - STMicroelectronics

部件名 2STN2360
功能描述  Low voltage fast-switching PNP power transistors
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

2STN2360 数据表(HTML) 3 Page - STMicroelectronics

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2STF2360 - 2STN2360
2 Electrical Characteristics
3/9
2
Electrical Characteristics
Table 3.
Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
Note: 1 Pulsed duration = 300
µs, duty cycle ≤1.5%.
2.1
Typical Characteristics (curves)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off Current
(IE = 0)
VCB = -60V
-100
nA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = -6V
-100
nA
VBE(on) Base-Emitter Voltage
VCE = -2V
IC = -100mA
-630
-670
-730
mV
VCE(sat)
Note: 1
Collector-Emitter Saturation
Voltage
IC = -2A _ _
IB = -100mA
IC = -3A
__
IB = -150mA
-250
-350
-320
-500
mV
mV
VBE(sat)
Note: 1
Base-Emitter Saturation
Voltage
IC = -2A
_
IB = -100mA
-0.89
-1.2
V
hFE
Note: 1
DC Current Gain
IC = -100mA_ VCE = -2V
IC = -1A _
VCE = -2V
80
160
280
400
td
tr
ts
tf
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
IC = -3A
VCC = -10V
10
75
250
35
15
100
350
50
ns
ns
ns
ns
fT
Transition Frequency
IC = -0.1A ___
VCE =-10V
130
MHz
Figure 1.
DC Current Gain
Figure 2.
DC Current Gain



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