2STN2540 datasheet(4/9 Pages) STMICROELECTRONICS

部件名	2STN2540

功能描述	Low voltage fast-switching PNP power bipolar transistor

PDF	9 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 9 page

Electrical characteristics

2STN2540

4/9

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (2) Pulsed duration = 300

µs, duty cycle ≤1.5%

2.1

Electrical characteristics (curves)

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = -30V

-0.1

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = -5V

-0.1

µA

VCE(sat) (2) Collector-emitter

saturation voltage

IC = -0.5A

IB = -5mA

IC = -1A

IB = -10mA

IC = -2A

IB = -200mA

IC = -5A

IB = -500mA

-80

-120

-140

-350

-120

-180

-200

-450

VBE(sat) (2)

Base-emitter saturation

voltage

IC = -5A

IB = -500mA

-1.3

VBE(on) (2) Base-emitter on voltage

VCE = -2V

IC = -2A

-1.25

hFE (2)

DC current gain

IC = -0.5A

VCE = -2V

IC = -1A

VCE = -2V

IC = -2A

VCE = -2V

IC = -5A

VCE = -2V

250

200

150

Figure 1.

DC current gain

Figure 2.

Collector-emitter saturation

voltage

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