2STR1230 datasheet(4/10 Pages) STMICROELECTRONICS

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Electrical characteristics

2STR1230

4/10

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (2) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = 30V

0.1

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = 4V

0.1

µA

V(BR)CBO

Collector-emitter

breakdown voltage

(IE = 0)

IC = 100µA

V(BR)CEO (2)

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10mA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 100µA

VCE(sat) (2) Collector-emitter

saturation voltage

IC = 0.1A

IB = 1mA

IC = 1A

IB = 100mA

IC = 2A

IB = 200mA

0.25

0.4

0.15

0.5

0.85

VBE(sat) (2)

Base-emitter saturation

voltage

IC = 1A

IB = 100mA

0.9

1.25

hFE (2)

DC current gain

IC = 50mA

VCE = 2V

IC = 0.5A

VCE = 2V

IC = 1A

VCE = 2V

IC = 2A

VCE = 2V

210

180

130

280

560

CCBO

Collector-base

capacitance

IE = 0

VCB = 10V

f = 1MHz

3pF

ton

toff

Resistive load

Turn-on time

Turn-off time

IC = 1.5A

VCC = 10V

IB1 = -IB2 = 150mA

380

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